BM600F12B34U2
1200V 400A SiC MOSFET module for high-power EV charging and solar inverters. Features ultra-low switching losses and ...
Product Overview
Description
1200V 400A SiC MOSFET module with advanced trench SiC technology. Optimized for high-efficiency power conversion.
Ultra-low switching losses enable 50-100kHz operation. 34mm package with excellent thermal performance.
AEC-Q101 automotive qualified. In stock with FAE support for gate drive and system design.
Product Series
SiC MOSFET Module
Primary Application
Key Features
- Advanced trench SiC MOSFET technology
- 1200V voltage rating with 400A current capability
- Ultra-low switching losses - 1/10th of IGBT
- 34mm package with RthJC = 0.10K/W
- No tail current - fast switching
- AEC-Q101 automotive qualification
Specifications
| Technology | SiC MOSFET |
|---|---|
| Voltage | 1200V |
| Current | 400A |
| Package | 34mm |
| VCES | 1200V |
| IC | 400A |
Applications
EV fast charging stations
Industrial application for SiC MOSFET Modules BM600F12B34U2
Solar inverters
Industrial application for SiC MOSFET Modules BM600F12B34U2
High-frequency power supplies
Industrial application for SiC MOSFET Modules BM600F12B34U2
Energy storage systems
Industrial application for SiC MOSFET Modules BM600F12B34U2
FAE Expert Insights
"BM600F12B34U2 is an excellent mid-range SiC module that hits the sweet spot for many applications. The 400A rating is perfect for 150-250kW EV chargers and commercial solar inverters. Customers appreciate the balance of performance and cost. We've seen great results in charging applications."
Mid-range SiC module ideal for 150-250kW EV charging
— Senior FAE - SiC Applications, BeiLuo
Frequently Asked Questions
What is the RDS(on) of BM600F12B34U2?
BM600F12B34U2 typical RDS(on) is 3.0mΩ at 25°C with +18V gate voltage. At 175°C junction temperature, RDS(on) increases to approximately 5.5mΩ. The low RDS(on) minimizes conduction losses, enabling high system efficiency even at elevated temperatures.
Calculate conduction losses at maximum operating temperature.
What is the recommended switching frequency?
BM600F12B34U2 is optimized for 50-100kHz switching frequency. At these frequencies, system efficiency is maximized while passive component size is minimized. Can operate up to 150kHz with proper thermal management for specialized applications.
Select 50-100kHz for optimal efficiency and size trade-off.
What gate drive voltage is required?
BM600F12B34U2 requires: +18V turn-on for lowest RDS(on), -4V turn-off for dv/dt immunity. Gate resistor: 3-8Ω. Peak gate current: 4A+. Use isolated SiC gate drivers with adequate peak current capability.
Use dedicated SiC gate drivers with +18V/-4V output and 4A+ peak current.
How does BM600F12B34U2 compare to BM840F12B34U2?
BM600F12B34U2 (400A) vs BM840F12B34U2 (500A): BM600 has lower current rating but also lower cost. Both use same 1200V SiC technology and 34mm package. BM600 is ideal for 150-250kW applications, BM840 for 250-350kW. Select based on current requirements and cost budget.
Select BM600 for 150-250kW applications. Select BM840 for higher power.
What is the thermal resistance?
Thermal resistance junction-to-case RthJC = 0.10K/W typical. Maximum junction temperature Tj(max) = 175°C. The low thermal resistance enables high power density in compact designs. Calculate heatsink requirements based on power dissipation.
Calculate heatsink requirements based on power dissipation and maximum junction temperature.
What applications is BM600F12B34U2 best suited for?
BM600F12B34U2 is ideal for: (1) 150-250kW EV fast charging. (2) 50-100kW solar inverters. (3) High-frequency industrial power supplies. (4) Energy storage systems. The 400A rating provides good balance of performance and cost for medium-to-high-power applications.
Use for medium-to-high-power applications requiring high efficiency.