BM840F12B34U2
1200V 500A SiC MOSFET module for EV charging. Features ultra-low switching losses and high-frequency operation.
Product Overview
Description
1200V 500A SiC MOSFET module with advanced trench SiC technology. Ultra-low switching losses enable high-frequency operation.
Typical RDS(on) of 2.5mΩ at 25°C. Switching losses 90% lower than IGBT.
AEC-Q101 automotive qualified. In stock with FAE support for gate drive design.
Product Series
SiC MOSFET Module
Primary Application
Key Features
- Advanced trench SiC MOSFET technology
- 1200V voltage rating with 500A current capability
- Ultra-low RDS(on) = 2.5mΩ typical
- Switching losses 90% lower than IGBT
- 34mm package with excellent thermal performance
- AEC-Q101 automotive qualification
Specifications
| Technology | SiC MOSFET |
|---|---|
| Voltage | 1200V |
| Current | 500A |
| Package | 34mm |
| VCES | 1200V |
| IC | 500A |
Applications
EV fast charging stations
Industrial application for SiC MOSFET Modules BM840F12B34U2
Solar inverters
Industrial application for SiC MOSFET Modules BM840F12B34U2
High-efficiency motor drives
Industrial application for SiC MOSFET Modules BM840F12B34U2
Energy storage systems
Industrial application for SiC MOSFET Modules BM840F12B34U2
FAE Expert Insights
"BM840F12B34U2 is an excellent SiC module for high-power applications. The 500A rating and ultra-low losses enable very high system efficiency. We've successfully used this in 150kW EV charging systems with excellent results. Proper gate drive design is critical for optimal performance."
High-current SiC module for demanding applications
— Senior FAE - SiC Applications, BeiLuo
Frequently Asked Questions
What is the RDS(on) of BM840F12B34U2?
BM840F12B34U2 typical RDS(on) is 2.5mΩ at 25°C with +18V gate voltage. At 175°C junction temperature, RDS(on) increases to approximately 4.5mΩ. The ultra-low RDS(on) minimizes conduction losses, enabling high system efficiency even at high temperatures.
Calculate conduction losses at maximum operating temperature for your application.
What is the recommended switching frequency?
BM840F12B34U2 is optimized for 50-100kHz switching frequency. At these frequencies, system efficiency is maximized while passive component size is minimized. The module can operate up to 150kHz with proper thermal management.
Select 50-100kHz for optimal efficiency and size trade-off.
What gate drive voltage is required?
BM840F12B34U2 requires: +18V turn-on for lowest RDS(on), -4V turn-off for dv/dt immunity. Gate resistor: 2-8Ω depending on switching speed. Peak gate current: 4A+. Use isolated SiC gate drivers with adequate peak current capability.
Use dedicated SiC gate drivers with +18V/-4V output and 4A+ peak current.
What is the thermal resistance?
Thermal resistance junction-to-case RthJC = 0.08K/W typical. Maximum junction temperature Tj(max) = 175°C. The low thermal resistance enables high power density designs. Calculate heatsink requirements based on power dissipation and maximum ambient temperature.
Calculate heatsink thermal resistance based on power dissipation and ambient temperature.
What applications is BM840F12B34U2 best suited for?
BM840F12B34U2 is ideal for high-power applications requiring high efficiency: (1) 120-180kW EV fast charging. (2) 50-100kW solar inverters. (3) High-efficiency motor drives. (4) Energy storage systems. The 500A rating and ultra-low losses make it suitable for demanding applications.
Use for high-power applications where efficiency is critical.
How does BM840F12B34U2 compare to IGBT modules?
BM840F12B34U2 (SiC) vs IGBT comparison: (1) Switching losses: 90% lower. (2) Switching frequency: 50-100kHz vs 10-20kHz. (3) Efficiency: 1-3% higher. (4) System size: 3-5x smaller. (5) Cost: Higher module cost but lower system cost. SiC is preferred for high-frequency, high-efficiency applications.
Evaluate TCO including efficiency gains vs higher module cost.