BYD Electronics SiC MOSFET Modules | Product List | Distributor

About SiC MOSFET Modules

BYD SiC MOSFET power modules feature advanced silicon carbide technology, offering ultra-low switching losses and high-frequency operation for next-generation power systems.

As an authorized distributor of BYD Electronics, BeiLuo provides a comprehensive range of SiC MOSFET Modules products. These products are widely used in industrial control, automotive electronics, consumer electronics, and communication equipment. We offer a complete product line with multiple series to meet various application requirements. All products are genuine and original, backed by professional technical support and comprehensive after-sales service.

Selection Guide: How to Choose the Right SiC MOSFET Modules

Product List

6 products available

Part Number ↕	Technology ↕	Voltage ↕	Current ↕	VCES ↕	IC ↕	Package ↕	Stock Status	Action
BM840F12B34U2	SiC MOSFET	1200V	500A	1200V	500A	34mm	In Stock	View Details
BM950F12B34U2	SiC MOSFET	1200V	550A	1200V	550A	34mm	In Stock	View Details
BM600F12B34U2	SiC MOSFET	1200V	400A	1200V	400A	34mm	In Stock	View Details
BM300F12B34U2	SiC MOSFET	1200V	300A	1200V	300A	34mm	In Stock	View Details
BM450F12B34U2	SiC MOSFET	N/A	N/A	N/A	N/A	N/A	In Stock	View Details
BM750F12B34U2	SiC MOSFET	N/A	N/A	N/A	N/A	N/A	In Stock	View Details

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Frequently Asked Questions

What are the advantages of BYD SiC MOSFET modules over IGBTs?

BYD SiC MOSFET modules offer significant advantages: (1) Switching losses reduced by 90% compared to IGBTs. (2) Support 50-100kHz switching frequency vs 10-20kHz for IGBTs. (3) System efficiency improvement of 1-3%. (4) Power density increase of 3-5x. (5) Higher temperature operation up to 175°C. (6) No tail current during turn-off. These advantages make SiC ideal for EV charging and high-efficiency applications.

Contact our FAE team for ROI analysis comparing SiC and IGBT solutions.

What gate drive requirements do SiC MOSFETs have?

BYD SiC MOSFETs require specific gate drive: (1) +18V turn-on voltage for lowest RDS(on). (2) -4V turn-off voltage to prevent dv/dt induced turn-on. (3) Gate resistance 2-8Ω depending on switching speed. (4) High CMTI (>100V/ns) gate drivers. (5) Kelvin source connection recommended. Use dedicated SiC gate drivers, not standard IGBT drivers.

Contact our FAE team for gate drive circuit design recommendations.

What voltage ratings are available for BYD SiC modules?

BYD SiC MOSFET modules are available in 1200V rating. The 1200V rating is suitable for 800V EV charging systems and high-voltage industrial applications. Higher voltage ratings (1700V) are under development. Contact our distributor for the latest product roadmap.

Use 1200V SiC modules for 800V EV charging and high-voltage applications.

Are BYD SiC modules automotive qualified?

Yes, BYD SiC MOSFET modules are AEC-Q101 qualified for automotive applications. The modules undergo rigorous reliability testing including high temperature operation, temperature cycling, and humidity testing. These modules are suitable for EV onboard chargers, DC-DC converters, and traction inverters.

Contact our FAE team for automotive qualification reports.

What packages are available for BYD SiC modules?

BYD SiC MOSFET modules use industry-standard 34mm packages. The 34mm package provides excellent thermal performance and is compatible with standard heatsinks and mounting hardware. The compact size enables high power density designs.

Contact our FAE team for package drawings and thermal models.