BM950F12B34U2
1200V 550A high-current SiC MOSFET module for ultra-high-power EV charging and industrial applications. Features ultr...
Product Overview
Description
1200V 550A high-current SiC MOSFET module. Highest current in BYD SiC portfolio.
Ultra-low switching losses for highest efficiency. 34mm package with excellent thermal performance.
AEC-Q101 automotive qualified. In stock with FAE support for system design.
Product Series
SiC MOSFET Module
Primary Application
Key Features
- Advanced silicon carbide MOSFET technology
- 1200V voltage rating with 550A current capability
- Ultra-low switching losses
- 34mm package with low thermal resistance
- Highest current density in portfolio
- AEC-Q101 automotive qualification
Specifications
| Technology | SiC MOSFET |
|---|---|
| Voltage | 1200V |
| Current | 550A |
| Package | 34mm |
| VCES | 1200V |
| IC | 550A |
Applications
Ultra-high-power EV charging
Industrial application for SiC MOSFET Modules BM950F12B34U2
High-power solar inverters
Industrial application for SiC MOSFET Modules BM950F12B34U2
Industrial motor drives
Industrial application for SiC MOSFET Modules BM950F12B34U2
High-power DC-DC converters
Industrial application for SiC MOSFET Modules BM950F12B34U2
FAE Expert Insights
"BM950F12B34U2 is BYD's highest current SiC module, enabling MW-level power conversion. The 550A rating and ultra-low losses make it ideal for ultra-fast EV charging. We've used this in 350kW+ charging systems with excellent results. Proper thermal and gate drive design is essential."
Ultra-high-current SiC module for MW-level applications
— Senior FAE - SiC Applications, BeiLuo
Frequently Asked Questions
What is the current rating of BM950F12B34U2?
BM950F12B34U2 has a continuous DC current rating of 550A. This is the highest current rating in BYD's SiC module portfolio, making it suitable for ultra-high-power applications up to 350kW+. The high current capability enables compact designs for megawatt-level systems through paralleling.
Use for ultra-high-power applications requiring 500A+ current.
What applications require BM950F12B34U2?
BM950F12B34U2 is designed for ultra-high-power applications: (1) 350kW+ EV fast charging stations. (2) High-power solar inverters (>100kW). (3) Large industrial motor drives. (4) Grid-scale energy storage systems. The 550A rating provides ample margin for peak power demands.
Use for ultra-high-power EV charging and industrial applications.
What is the difference between BM950F12B34U2 and BM840F12B34U2?
BM950F12B34U2 and BM840F12B34U2 have the same voltage (1200V) and package (34mm) but different current ratings (550A vs 500A). BM950 uses larger die and has slightly higher switching losses. BM950 is ideal for ultra-high-power applications, while BM840 offers better efficiency for standard high-power applications.
Select BM840 for standard high-power. Select BM950 for ultra-high-power applications.
What thermal management is required?
BM950F12B34U2 requires robust thermal management due to high power. Recommended: (1) Heatsink thermal resistance <0.08K/W. (2) Liquid cooling preferred for continuous operation. (3) High-performance thermal interface material. (4) Thermal simulation for worst-case analysis. The high current capability demands excellent thermal design.
Design liquid cooling system for continuous high-power operation.
What gate drive is required?
BM950F12B34U2 requires high-current gate drive due to large die size: +18V/-4V gate voltage. Gate resistor: 2-4Ω. Peak gate current: 6A+. Gate drive power: ~5W at 100kHz. Use dedicated high-current SiC gate drivers with adequate drive capability.
Use high-current SiC gate drivers capable of 6A+ peak current.
Can BM950F12B34U2 be paralleled?
Yes, BM950F12B34U2 can be paralleled for MW-level power. The positive temperature coefficient of RDS(on) ensures good current sharing. Use matched devices and symmetrical layout with individual gate drives. Paralleling enables megawatt-level power conversion for grid-scale applications.
Use matched devices with symmetrical layout and individual gate drives.