BM750F12B34U2
1200V 750A SiC MOSFET module for high-power 800V EV systems with excellent thermal performance.
Product Overview
Description
BM750F12B34U2 provides 750A current capability with SiC technology, delivering exceptional power density for demanding applications.
The module combines high current handling with low conduction losses, achieving system efficiencies above 98% in optimal designs.
Designed for high-reliability applications, this module features advanced packaging technology for excellent thermal management.
Product Series
Primary Application
Key Features
- 750A high current rating
- Exceptional power density
- Low conduction losses
- Advanced thermal management
Specifications
| Technology | SiC MOSFET |
|---|---|
| Voltage | N/A |
| Current | N/A |
| Package | N/A |
| VCES | N/A |
| IC | N/A |
Applications
High-power EV chargers
Industrial application for BYD SiC MOSFET Module BM750F12B34U2
Industrial motor drives
Industrial application for BYD SiC MOSFET Module BM750F12B34U2
Grid-scale energy storage
Industrial application for BYD SiC MOSFET Module BM750F12B34U2
High-power inverters
Industrial application for BYD SiC MOSFET Module BM750F12B34U2
FAE Expert Insights
"The BM750F12B34U2 is an excellent choice for high-power ev chargers applications. Based on our extensive experience with BYD power devices, this product delivers reliable performance with excellent cost-effectiveness. The 750A high current rating provides significant advantages in real-world applications. I recommend this device for customers seeking high current capability in their designs. Contact our FAE team for application-specific guidance and reference designs."
BYD SiC MOSFET Module BM750F12B34U2 for High-power EV chargers
— David Li, BeiLuo
Frequently Asked Questions
What are the key features of BM750F12B34U2?
The BM750F12B34U2 features 750A high current rating, Exceptional power density, Low conduction losses, Advanced thermal management. It is designed for High-power EV chargers, Industrial motor drives, Grid-scale energy storage, High-power inverters applications, providing excellent performance with 750A.
Contact our FAE team for detailed specifications and application guidance.
How do I select the right configuration for BM750F12B34U2?
Selection depends on your specific application requirements including current and voltage ratings. Review the datasheet for detailed specifications and contact our FAE team for personalized recommendations.
Review application requirements and consult FAE team for optimal configuration.
What support is available for BM750F12B34U2 designs?
BeiLuo provides comprehensive support including reference designs, evaluation boards, and FAE assistance. Contact our technical team for design review and debugging support.
Contact BeiLuo FAE team for design support and optimization guidance.
What is the maximum junction temperature for BM750F12B34U2?
BM750F12B34U2 has a maximum junction temperature of 150°C. This high temperature rating ensures reliable operation in demanding applications. Proper thermal management with adequate heatsinking is essential to maintain junction temperature within specified limits.
Ensure thermal design keeps junction temperature below 150°C for reliable operation.
What is the recommended heatsink thermal resistance for BM750F12B34U2?
The recommended heatsink thermal resistance for BM750F12B34U2 depends on your application power dissipation and maximum ambient temperature. Calculate using Rth_heatsink = (Tj_max - Ta_max) / P_dissipation - Rth_jc - Rth_interface. Contact our FAE team for specific thermal design assistance.
Contact FAE for thermal calculations and heatsink selection guidance.