BSC014N10NS
100V 120A N-channel power MOSFET with 1.4mΩ RDS(on). High-performance device for EV charging and industrial applicati...
Product Overview
Description
100V 120A N-channel power MOSFET with ultra-low 1.4mΩ RDS(on). Advanced trench technology.
Excellent for high-current applications. Low conduction and switching losses.
TO-263 package. In stock with FAE support for high-power designs.
Product Series
Power MOSFET
Primary Application
Key Features
- 100V voltage rating
- 120A continuous current
- Ultra-low RDS(on) = 1.4mΩ typical
- Advanced trench technology
- Excellent switching performance
- TO-263 package
Specifications
| Technology | N-Channel MOSFET |
|---|---|
| Voltage | 100V |
| Current | 120A |
| Package | TO-263 |
| VDS | 100V |
| ID | 120A |
Applications
EV charging
Industrial application for Power MOSFETs BSC014N10NS
Industrial drives
Industrial application for Power MOSFETs BSC014N10NS
High-current DC-DC converters
Industrial application for Power MOSFETs BSC014N10NS
Power supplies
Industrial application for Power MOSFETs BSC014N10NS
FAE Expert Insights
"BSC014N10NS is our high-performance 100V MOSFET with excellent RDS(on). The 1.4mΩ rating enables very efficient high-current designs. We've used this successfully in EV charging and industrial applications with excellent results."
Ultra-low RDS(on) for high-current applications
— Senior FAE - High Power Applications, BeiLuo
Frequently Asked Questions
What is the RDS(on) of BSC014N10NS?
BSC014N10NS typical RDS(on) is 1.4mΩ at VGS=10V and 25°C. This is an ultra-low value that minimizes conduction losses. At 100°C junction temperature, RDS(on) is approximately 2.1mΩ. The low RDS(on) is ideal for high-current applications.
Use for high-current applications where conduction losses are critical.
What applications is BSC014N10NS best suited for?
BSC014N10NS is ideal for: (1) EV charging primary side switching. (2) High-current DC-DC converters. (3) Industrial motor drives. (4) High-power synchronous rectification. The 100V rating and ultra-low RDS(on) make it suitable for demanding high-current applications.
Ideal for high-current EV charging and industrial applications.
What is the thermal resistance?
Thermal resistance junction-to-case RthJC = 0.8K/W typical. Maximum junction temperature Tj(max) = 175°C. The excellent thermal performance enables high power density designs. Proper heatsinking is required for continuous high-current operation.
Use adequate heatsinking for continuous operation above 40A.
How does BSC014N10NS compare to 60V MOSFETs?
BSC014N10NS (100V) vs 60V MOSFETs: The 100V rating provides higher voltage margin for 48V and 60V applications. However, for the same die size, 60V MOSFETs typically have lower RDS(on). Select 100V for voltage margin, 60V for lowest RDS(on) in low-voltage applications.
Select 100V for 48V/60V applications. Select 60V for 12V/24V applications.
What gate drive is required?
BSC014N10NS requires VGS = 10V for lowest RDS(on). The total gate charge is approximately 60nC, requiring adequate gate drive capability. Use gate drivers capable of providing 2A+ peak current for fast switching.
Use 10V gate drive with adequate current capability for fast switching.
Can BSC014N10NS be paralleled?
Yes, BSC014N10NS can be paralleled for very high current applications. The positive temperature coefficient of RDS(on) helps with current sharing. Use symmetrical layout and individual gate resistors for best results. Paralleling can achieve 200A+ continuous current.
Use symmetrical layout with individual gate resistors for parallel operation.