BSC040N06NS
60V 100A N-channel power MOSFET with 4.0mΩ RDS(on). Ideal for DC-DC converters and motor drives.
Product Overview
Description
60V 100A N-channel power MOSFET with trench technology. Low RDS(on) of 4.0mΩ at VGS=10V.
Excellent switching performance with low gate charge. Suitable for high-frequency operation.
TO-263 package for good thermal performance. In stock with FAE support.
Product Series
Power MOSFET
Primary Application
Key Features
- 60V voltage rating
- 100A continuous current
- Low RDS(on) = 4.0mΩ typical
- Trench MOSFET technology
- Low gate charge
- TO-263 package
Specifications
| Technology | N-Channel MOSFET |
|---|---|
| Voltage | 60V |
| Current | 100A |
| Package | TO-263 |
| VDS | 60V |
| ID | 100A |
Applications
DC-DC converters
Industrial application for Power MOSFETs BSC040N06NS
Motor drives
Industrial application for Power MOSFETs BSC040N06NS
Power supplies
Industrial application for Power MOSFETs BSC040N06NS
Synchronous rectification
Industrial application for Power MOSFETs BSC040N06NS
FAE Expert Insights
"BSC040N06NS is an excellent general-purpose power MOSFET. The 4.0mΩ RDS(on) provides good efficiency for DC-DC converters. We've successfully used this in numerous power supply designs with excellent results."
Low RDS(on) MOSFET for DC-DC converters
— Senior FAE - Power Conversion, BeiLuo
Frequently Asked Questions
What is the RDS(on) of BSC040N06NS?
BSC040N06NS typical RDS(on) is 4.0mΩ at VGS=10V and 25°C. At higher temperatures, RDS(on) increases. At 100°C junction temperature, RDS(on) is approximately 6.0mΩ. The low RDS(on) minimizes conduction losses.
Calculate conduction losses at maximum operating temperature.
What is the gate charge of BSC040N06NS?
BSC040N06NS total gate charge Qg is approximately 25nC at VGS=10V. The low gate charge enables fast switching and reduces gate drive power requirements. This is beneficial for high-frequency applications.
Use for high-frequency applications where gate drive power is a concern.
What is the thermal resistance of BSC040N06NS?
Thermal resistance junction-to-case RthJC = 1.5K/W typical. Maximum junction temperature Tj(max) = 175°C. The TO-263 package provides good thermal performance for medium power applications. Use adequate heatsinking for continuous operation.
Use heatsink for continuous operation above 20A.
Can BSC040N06NS be used for synchronous rectification?
Yes, BSC040N06NS is excellent for synchronous rectification applications. The low RDS(on) minimizes conduction losses, and the 60V rating is suitable for 12V and 24V output applications. The fast switching characteristics enable high-frequency operation.
Ideal for synchronous rectification in DC-DC converters.
What gate voltage is recommended?
BSC040N06NS is recommended to operate with VGS = 10V for lowest RDS(on). It can also operate at VGS = 4.5V with higher RDS(on). For best performance and lowest losses, use 10V gate drive. For more detailed information and application guidance, please consult the product datasheet or contact our technical support team.
Use 10V gate drive for lowest RDS(on) and best performance.
What is the difference between BSC040N06NS and BSC060N06NS?
BSC040N06NS and BSC060N06NS have the same voltage rating (60V) but different RDS(on) (4.0mΩ vs 6.0mΩ). BSC040 has lower RDS(on) but higher cost. BSC060 offers cost savings for applications where conduction losses are less critical.
Select BSC040 for highest efficiency. Select BSC060 for cost-sensitive applications.