GDS100M12B1

✓ In Stock

1200V 100A SiC MOSFET module with 12mΩ RDS(on), ideal for EV charging and solar inverters.

Product Overview

Description

1200V 100A SiC MOSFET module with 12mΩ RDS(on). Silicon carbide technology for ultra-fast switching.

Easy1B package with integrated NTC and low parasitic inductance. Supports switching up to 100kHz.

In stock for EV charging and renewable energy applications. FAE support for gate drive and thermal design.

Product Series

1200V SiC

Primary Application

Key Features

  • Silicon carbide MOSFET with 12mΩ RDS(on) at 25°C
  • Zero reverse recovery charge with SiC Schottky diode
  • High switching frequency: up to 100kHz
  • Low switching losses for high efficiency
  • Easy1B package with RthJC = 0.4K/W
  • Integrated NTC temperature sensor

Specifications

Voltage Rating 1200V
Current Rating 100A
Temperature Range -40°C to +150°C
Package Standard Module
Drain Current N/A
Drain-Source Voltage N/A
Rds(on) N/A
Switching Frequency 100kHz
Isolation Voltage N/A
Operating Temperature N/A
Qualification N/A

Applications

EV charging stations

Industrial application for SiC Modules GDS100M12B1

Solar inverters

Industrial application for SiC Modules GDS100M12B1

High-frequency power supplies

Industrial application for SiC Modules GDS100M12B1

Automotive DC-DC

Industrial application for SiC Modules GDS100M12B1

Energy storage

Industrial application for SiC Modules GDS100M12B1

Documents & Resources

FAE Expert Insights

S

"Based on extensive field experience, this product delivers excellent performance across various operating conditions. The design incorporates proven architecture with robust protection features. Customers consistently report high satisfaction with reliability and ease of integration."

Reliable, good performance

— Senior FAE, BeiLuo

Frequently Asked Questions

What are the key specifications and parameters of GDS100M12B1?

The GDS100M12B1 (SiC Modules GDS100M12B1) features: (1) Optimized voltage and current ratings for SiC Modules applications. (2) Low switching losses and conduction losses for high efficiency. (3) Wide operating temperature range ensuring reliable performance. (4) Robust package design for industrial environments. (5) Comprehensive protection features including overcurrent and thermal protection. Please refer to the datasheet for detailed electrical characteristics and operational parameters.

Review the complete datasheet for all specifications. Contact FAE for parameter interpretation and application guidance.

specifications parameters GDS100M12B1 technical data
How do I select and use GDS100M12B1 in my application? What are the key selection criteria?

For proper selection and usage of GDS100M12B1: (1) Determine your voltage and current requirements with adequate safety margins. (2) Calculate power dissipation and ensure adequate thermal management. (3) Select appropriate gate drive voltage and current based on switching frequency. (4) Consider protection requirements including short-circuit and overcurrent. (5) Follow recommended PCB layout guidelines for optimal performance. (6) Validate the design under all operating conditions including worst-case scenarios.

Use our selection guide or contact FAE for application-specific recommendations.

selection usage design guide application criteria
How does GDS100M12B1 compare to Infineon, Mitsubishi, Fuji, or other competitive products?

The GDS100M12B1 offers competitive advantages: (1) Comparable or better electrical performance at competitive pricing. (2) Local technical support from BeiLuo FAE team for faster response. (3) Reliable supply chain with shorter lead times for standard products. (4) Extensive application expertise in Chinese market. (5) Comprehensive reference designs and technical documentation. Compared to Infineon FF series, Mitsubishi CM series, or Fuji 2MBI series, Starpower modules provide similar performance with better local support and competitive pricing.

Evaluate based on performance requirements, cost targets, and support needs. Request samples for direct comparison testing.

comparison Infineon Mitsubishi Fuji competitive analysis
What are the primary applications and target markets for GDS100M12B1?

The GDS100M12B1 is specifically designed for SiC Modules applications including: (1) Industrial motor drives and variable frequency drives (VFD). (2) Renewable energy systems such as solar inverters and wind power converters. (3) Electric vehicle charging stations and onboard chargers. (4) Industrial power supplies and welding equipment. (5) Uninterruptible power supplies (UPS) and energy storage systems. The module's characteristics are optimized for these demanding applications requiring high reliability and efficiency.

Ideal for SiC Modules applications. Verify specifications match your specific requirements.

applications target markets use cases SiC Modules
What is the lead time, MOQ, pricing, and availability for GDS100M12B1?

For GDS100M12B1: (1) Standard lead time is 6-10 weeks for production orders. (2) BeiLuo maintains strategic inventory for faster delivery on popular products. (3) MOQ is typically 100 pieces for production orders. (4) Sample quantities (1-10 pieces) available for evaluation with 2-3 week lead time. (5) Volume pricing available for high-quantity orders. (6) Long-term supply agreements supported for OEM customers. Contact BeiLuo sales for current stock status, pricing, and delivery schedules. We ensure reliable supply as an authorized Starpower distributor.

Contact sales for current lead times and pricing. Plan for standard production lead times.

lead time MOQ pricing availability delivery