MMBT60N06
MacMic MMBT60N06 60V 60A power MOSFET in TO-220 package with low on-resistance for switching applications.
Product Overview
Description
This power MOSFET features low on-resistance of 12mΩ typical for efficient power switching.
Fast switching characteristics with low gate charge make it suitable for high-frequency applications.
Ideal for DC-DC converters, motor drives, and power switching circuits.
Product Series
Primary Application
Key Features
- 60A current capability
- Low 12mΩ Rds-on
- Fast switching
- TO-220 package
- High reliability
Specifications
| Drain-Source Voltage (Vds) | 60V |
|---|---|
| Continuous Drain Current (Id) | 60A @ 25°C |
| On-Resistance (Rds-on) | 12mΩ typical |
| Gate Threshold Voltage | 2-4V |
| Total Gate Charge | 35nC typical |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220 |
| Technology | Trench MOSFET |
| Collector-Emitter Voltage (Vces) | N/A |
| Continuous Collector Current (Ic) | N/A |
| Vce(sat) typical | N/A |
| Reverse Voltage (Vrrm) | N/A |
| Forward Current (If) | N/A |
| Recovery Time (trr) | N/A |
| Forward Voltage (Vf) | N/A |
| Voltage Rating | N/A |
| Current Rating | N/A |
| Temperature Range | N/A |
Applications
DC-DC Converters
Industrial application for 60A 60V N-Channel MOSFET
Motor Drives
Industrial application for 60A 60V N-Channel MOSFET
Power Switching
Industrial application for 60A 60V N-Channel MOSFET
SMPS
Industrial application for 60A 60V N-Channel MOSFET
FAE Expert Insights
"The MMBT60N06 is a reliable low-voltage MOSFET that I specify for DC-DC converter and switching applications. The 60V rating with 60A current capability provides excellent performance for 12V and 24V systems. I recommend this device for applications requiring fast switching with low conduction losses."
Reliable 60V MOSFET for DC-DC converter applications
— David Chen, BeiLuo
Frequently Asked Questions
What is the on-resistance?
Typical Rds-on is 12mΩ at Vgs=10V.
Consider in conduction loss calculations.
What package is used?
Standard TO-220 package.
Compatible with standard heatsinks.
How do I select the right product for my application?
Selecting the right product involves analyzing your application requirements including voltage, current, switching frequency, and thermal conditions. Consider the maximum voltage stress, continuous and peak current requirements, and switching speed needs. Our FAE team can provide detailed selection guidance based on your specific application parameters including load characteristics, duty cycle, and environmental conditions.
Provide your application requirements to our FAE team for personalized product recommendations.
What is the recommended gate drive for this IGBT/MOSFET?
Proper gate drive design is critical for optimal performance. I recommend using gate drivers with adequate output current capability (typically 2-4A for medium power devices). Gate resistor selection depends on switching frequency and EMI requirements - typically 5-15Ω for IGBTs and 10-47Ω for MOSFETs. Include negative gate voltage (-5V to -8V) for IGBTs to prevent false turn-on. For high-frequency applications, minimize gate loop inductance and use Kelvin source connections when available.
Contact our FAE team for gate drive design recommendations specific to your application.
What thermal management is required for this product?
Effective thermal management is essential for reliable operation. Use thermal interface material with thermal conductivity of at least 3 W/mK between the module and heat sink. Ensure adequate heat sink sizing based on your maximum power dissipation and ambient temperature. I recommend maintaining case temperature below 85°C for long-term reliability. For high-power applications, consider forced air cooling or liquid cooling solutions. Thermal modeling can help optimize your thermal design.
Perform thermal calculations or contact FAE for thermal design assistance.