MMBT20N10
MacMic MMBT20N10 100V 20A power MOSFET featuring fast switching speed and low gate charge for DC-DC converters.
Product Overview
Description
This MOSFET provides 20A capability at 100V with low on-resistance for efficient switching.
Features rugged construction and fast switching for reliable operation in industrial applications.
Suitable for 100V motor drives, DC-DC converters, and power supplies.
Product Series
Primary Application
Key Features
- 20A at 100V
- Low Rds-on
- Fast switching
- Rugged construction
- TO-220 package
Specifications
| Drain-Source Voltage (Vds) | 100V |
|---|---|
| Continuous Drain Current (Id) | 20A @ 25°C |
| On-Resistance (Rds-on) | 45mΩ typical |
| Gate Threshold Voltage | 2-4V |
| Total Gate Charge | 18nC typical |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220 |
| Technology | Trench MOSFET |
| Collector-Emitter Voltage (Vces) | N/A |
| Continuous Collector Current (Ic) | N/A |
| Vce(sat) typical | N/A |
| Reverse Voltage (Vrrm) | N/A |
| Forward Current (If) | N/A |
| Recovery Time (trr) | N/A |
| Forward Voltage (Vf) | N/A |
| Voltage Rating | N/A |
| Current Rating | N/A |
| Temperature Range | N/A |
Applications
100V Motor Drives
Industrial application for 20A 100V N-Channel MOSFET
DC-DC Converters
Industrial application for 20A 100V N-Channel MOSFET
Power Supplies
Industrial application for 20A 100V N-Channel MOSFET
Industrial Controls
Industrial application for 20A 100V N-Channel MOSFET
FAE Expert Insights
"For 100V applications, the MMBT20N10 delivers excellent switching performance with low gate charge. I have successfully used this MOSFET in numerous DC-DC converter designs where fast switching is critical. The TO-220 package provides good thermal performance for medium-power applications."
Fast-switching 100V MOSFET optimized for DC-DC converters
— David Chen, BeiLuo
Frequently Asked Questions
What voltage rating?
100V drain-source voltage rating.
Suitable for 100V applications.
What is the gate charge?
Typical total gate charge is 18nC.
Consider in gate driver selection.
How do I select the right product for my application?
Selecting the right product involves analyzing your application requirements including voltage, current, switching frequency, and thermal conditions. Consider the maximum voltage stress, continuous and peak current requirements, and switching speed needs. Our FAE team can provide detailed selection guidance based on your specific application parameters including load characteristics, duty cycle, and environmental conditions.
Provide your application requirements to our FAE team for personalized product recommendations.
What is the recommended gate drive for this IGBT/MOSFET?
Proper gate drive design is critical for optimal performance. I recommend using gate drivers with adequate output current capability (typically 2-4A for medium power devices). Gate resistor selection depends on switching frequency and EMI requirements - typically 5-15Ω for IGBTs and 10-47Ω for MOSFETs. Include negative gate voltage (-5V to -8V) for IGBTs to prevent false turn-on. For high-frequency applications, minimize gate loop inductance and use Kelvin source connections when available.
Contact our FAE team for gate drive design recommendations specific to your application.
What thermal management is required for this product?
Effective thermal management is essential for reliable operation. Use thermal interface material with thermal conductivity of at least 3 W/mK between the module and heat sink. Ensure adequate heat sink sizing based on your maximum power dissipation and ambient temperature. I recommend maintaining case temperature below 85°C for long-term reliability. For high-power applications, consider forced air cooling or liquid cooling solutions. Thermal modeling can help optimize your thermal design.
Perform thermal calculations or contact FAE for thermal design assistance.