MMO200A040
MacMic MMO200A040 400V 200A MOSFET module with low on-resistance for high-power synchronous rectification.
Product Overview
Description
This MOSFET module provides 200A capability at 40V with ultra-low on-resistance for minimal losses.
Features low gate charge and fast switching for efficient high-frequency operation.
Ideal for 12V and 24V battery systems, electric vehicles, and high-current DC applications.
Product Series
Primary Application
Key Features
- 200A high current
- Ultra-low 1.5mΩ Rds-on
- 40V rating
- SOT-227 package
- Low switching losses
Specifications
| Drain-Source Voltage (Vds) | 40V |
|---|---|
| Continuous Drain Current (Id) | 200A @ 25°C |
| On-Resistance (Rds-on) | 1.5mΩ typical |
| Gate Threshold Voltage | 2-4V |
| Total Gate Charge | 180nC typical |
| Operating Temperature | -40°C to +150°C |
| Package | SOT-227 |
| Technology | Trench MOSFET Module |
| Drain-Source Voltage (Vdss) | N/A |
| RDS(on) typical | N/A |
| Gate Charge (Qg) | N/A |
| Voltage Rating | N/A |
| Current Rating | N/A |
| Temperature Range | N/A |
Applications
12V/24V Battery Systems
Industrial application for 200A 40V MOSFET Module
Electric Vehicles
Industrial application for 200A 40V MOSFET Module
High-Current DC
Industrial application for 200A 40V MOSFET Module
Synchronous Rectification
Industrial application for 200A 40V MOSFET Module
FAE Expert Insights
"The MMO200A040 is an excellent MOSFET module for high-current applications. The low on-resistance minimizes conduction losses, making it ideal for synchronous rectification in power supplies. I recommend this module for applications requiring high efficiency at moderate voltages."
Low-RDS(on) MOSFET module for high-efficiency synchronous rectification
— David Chen, BeiLuo
Frequently Asked Questions
What is the on-resistance?
Ultra-low 1.5mΩ typical.
Excellent efficiency for high-current.
What package is used?
Standard SOT-227 package.
Compatible with standard heatsinks.
How do I select the right product for my application?
Selecting the right product involves analyzing your application requirements including voltage, current, switching frequency, and thermal conditions. Consider the maximum voltage stress, continuous and peak current requirements, and switching speed needs. Our FAE team can provide detailed selection guidance based on your specific application parameters including load characteristics, duty cycle, and environmental conditions.
Provide your application requirements to our FAE team for personalized product recommendations.
What is the recommended gate drive for this IGBT/MOSFET?
Proper gate drive design is critical for optimal performance. I recommend using gate drivers with adequate output current capability (typically 2-4A for medium power devices). Gate resistor selection depends on switching frequency and EMI requirements - typically 5-15Ω for IGBTs and 10-47Ω for MOSFETs. Include negative gate voltage (-5V to -8V) for IGBTs to prevent false turn-on. For high-frequency applications, minimize gate loop inductance and use Kelvin source connections when available.
Contact our FAE team for gate drive design recommendations specific to your application.
What thermal management is required for this product?
Effective thermal management is essential for reliable operation. Use thermal interface material with thermal conductivity of at least 3 W/mK between the module and heat sink. Ensure adequate heat sink sizing based on your maximum power dissipation and ambient temperature. I recommend maintaining case temperature below 85°C for long-term reliability. For high-power applications, consider forced air cooling or liquid cooling solutions. Thermal modeling can help optimize your thermal design.
Perform thermal calculations or contact FAE for thermal design assistance.