CSJ60N30A
30V N-channel MOSFET with 2.8mΩ RDS(on), ideal for DC-DC converters and load switching
Product Overview
Description
30V N-channel MOSFET with ultra-low 2.8mΩ RDS(on). Advanced trench technology for high-efficiency switching.
DPAK package with excellent thermal performance. Low gate charge (28nC) enables high-frequency operation.
In stock for DC-DC converter applications. FAE support available.
Product Series
Low-Voltage
Primary Application
Key Features
- Advanced trench technology with 2.8mΩ RDS(on)
- Low gate charge Qg = 28nC
- High current capability: 60A continuous
- DPAK package for compact designs
- Fast switching characteristics
- 100% avalanche tested
Specifications
| Voltage Rating | 30V |
|---|---|
| Current Rating | 60A |
| VDSS | 30V |
| RDS(on) | 2.8mΩ |
| ID | 60A |
| Qg | 28nC |
| Temperature Range | -55°C to +175°C |
| VGS(th) | 2.0-3.0V |
| Technology | Trench |
Applications
DC-DC converters
Industrial application for
Load switching
Industrial application for
Battery management
Industrial application for
Power tools
Industrial application for
Consumer electronics
Industrial application for
FAE Expert Insights
"CSJ60N30A offers excellent performance for power switching applications. Low RDS(on) reduces conduction losses."
Low RDS(on) MOSFET
— LiTong FAE, BeiLuo
Frequently Asked Questions
What is the RDS(on)?
2.8mΩ typical at VGS=10V
Low RDS(on) for high efficiency
What package?
DPAK surface mount package
Compact SMD package
Max frequency?
Up to 500kHz
High frequency capable
Applications?
DC-DC converters, load switching
Low voltage applications
Stock status?
In stock
Available immediately