CSJ100N20A
100V N-channel MOSFET with 3.5mΩ RDS(on), ideal for high-current DC-DC converters and motor drives.
Product Overview
Description
100V N-channel MOSFET with ultra-low 3.5mΩ RDS(on). Advanced trench technology for high-efficiency switching.
TO-220 package with excellent thermal performance. Low gate charge (45nC) enables high-frequency operation up to 300kHz.
In stock for high-current DC-DC and motor drive applications. FAE support for thermal design and gate drive optimization.
Product Series
Low-Voltage
Primary Application
Key Features
- Advanced trench technology with 3.5mΩ RDS(on) typical
- Low gate charge Qg = 45nC for efficient switching
- High current capability: 100A continuous at 25°C
- TO-220 package with RthJC = 0.8°C/W
- Fast switching: tr = 15ns, tf = 12ns typical
- 100% avalanche tested for reliability
Specifications
| Voltage Rating | 100V |
|---|---|
| Current Rating | 100A |
| Temperature Range | -55°C to +175°C |
| VDSS | 100V |
| RDS(on) | 3.5mΩ |
| ID | 100A |
| Qg | 45nC |
| VGS(th) | 2.0-3.0V |
| Technology | Trench |
Applications
Synchronous rectification
Industrial application for Power MOSFETs CSJ100N20A
DC-DC converters
Industrial application for Power MOSFETs CSJ100N20A
Motor drives
Industrial application for Power MOSFETs CSJ100N20A
Battery management
Industrial application for Power MOSFETs CSJ100N20A
Power tools
Industrial application for Power MOSFETs CSJ100N20A
FAE Expert Insights
"The CSJ100N20A is an excellent choice for high-current DC-DC converters and motor drives. Its 3.5mΩ RDS(on) delivers exceptional efficiency, reducing conduction losses by 30% compared to previous generation devices. I have successfully recommended this MOSFET for 48V mild hybrid BMS applications and industrial motor drives. The TO-220 package provides excellent thermal performance, and the avalanche ruggedness ensures reliability in inductive load switching. For optimal performance, use a 10V gate drive with 4-6A peak current capability."
3.5mΩ ultra-low RDS(on), ideal for high-current applications
— 张伟, BeiLuo
Frequently Asked Questions
What is the maximum switching frequency for CSJ100N20A?
CSJ100N20A supports switching frequencies up to 300kHz in hard-switching applications and up to 500kHz in soft-switching resonant converters. The low gate charge (Qg = 45nC) and fast switching times (tr = 15ns, tf = 12ns) enable efficient high-frequency operation. For optimal performance at high frequencies, use a gate driver with 4-6A peak current capability and minimize gate loop inductance.
Contact our FAE team for gate driver recommendations and PCB layout guidelines for high-frequency designs.
What is the thermal resistance of CSJ100N20A in TO-220 package?
CSJ100N20A in TO-220 package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.8°C/W. (2) Junction-to-ambient thermal resistance RthJA = 62°C/W (without heatsink). (3) Maximum junction temperature Tj(max) = 175°C. For continuous operation at 100A with 3.5mΩ RDS(on), the conduction loss is 35W, requiring a heatsink with thermal resistance of approximately 2°C/W or better to maintain junction temperature below 125°C at 25°C ambient.
Contact our FAE team for thermal simulation and heatsink selection guidance.
Can CSJ100N20A be used for synchronous rectification in LLC converters?
Yes, CSJ100N20A is well-suited for synchronous rectification in LLC resonant converters. Its characteristics make it ideal for this application: (1) Low RDS(on) of 3.5mΩ minimizes conduction losses at high currents. (2) Low Qg and fast switching enable efficient operation at LLC typical frequencies of 100-300kHz. (3) Body diode with reasonable reverse recovery characteristics. (4) 100V rating provides adequate margin for 48V bus applications. For LLC SR applications, consider using two MOSFETs in parallel for very high current outputs (>50A).
Contact our FAE team for LLC synchronous rectification design support and SR controller recommendations.
What is the avalanche energy rating of CSJ100N20A?
CSJ100N20A has a single-pulse avalanche energy rating of EAS = 500mJ at starting junction temperature of 25°C, with avalanche current IAR = 50A and clamped inductive load. This rating ensures the MOSFET can safely absorb energy from unclamped inductive switching transients. The device is 100% avalanche tested during production. For applications with frequent or high-energy inductive switching, additional external protection such as TVS diodes or RC snubbers is recommended.
Contact our FAE team for avalanche ruggedness testing data and inductive load protection design.
What gate drive voltage is recommended for CSJ100N20A?
CSJ100N20A is optimized for 10V gate drive (VGS = 10V) where it achieves the specified 3.5mΩ RDS(on). The MOSFET can also operate with 4.5V gate drive for compatibility with logic-level drivers, though RDS(on) increases to approximately 5.5mΩ. The gate threshold voltage VGS(th) is typically 2.5V with a range of 2.0V to 3.0V. For high-current applications, 10V gate drive is recommended to minimize conduction losses. The gate drive circuit should provide fast rise/fall times to minimize switching losses.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
Is CSJ100N20A suitable for automotive applications?
CSJ100N20A is built on a automotive-qualified process platform and meets AEC-Q101 standards. It is suitable for automotive applications including: (1) Electric power steering (EPS) systems. (2) DC-DC converters for 48V mild hybrid systems. (3) Battery management systems (BMS). (4) Motor drives for cooling fans and pumps. The device undergoes rigorous testing including temperature cycling, high-temperature operating life (HTOL), and electrostatic discharge (ESD) testing. For specific automotive qualification data and PPAP documentation, please contact our FAE team.
Contact our FAE team for automotive qualification reports and PPAP documentation.