CSG20N65A
650V 40A trench field-stop IGBT with 1.6V VCE(sat), ideal for induction cookers and motor drives.
Product Overview
Description
650V 40A trench field-stop IGBT with low 1.6V VCE(sat). Optimized for high-efficiency power conversion.
TO-247 package with excellent thermal performance. Low switching losses enable operation up to 30kHz.
In stock for induction heating and motor drive applications. FAE support for gate drive and thermal design.
Product Series
650V
Primary Application
Key Features
- Trench field-stop technology with 1.6V VCE(sat) typical
- Low switching losses: Eon = 0.6mJ, Eoff = 0.6mJ
- High current capability: 40A continuous at 100°C
- TO-247 package with RthJC = 0.6°C/W
- 10μs short-circuit withstand time
- Built-in fast recovery anti-parallel diode
Specifications
| Voltage Rating | 650V |
|---|---|
| Current Rating | 40A |
| Temperature Range | -55°C to +175°C |
| VCES | 650V |
| IC | 40A |
| VCE(sat) | 1.5-2.0V |
| Eoff | N/A |
| Ton | N/A |
| Technology | Trench Field-Stop |
Applications
Induction cookers
Industrial application for IGBTs CSG20N65A
Inverter air conditioners
Industrial application for IGBTs CSG20N65A
Motor drives
Industrial application for IGBTs CSG20N65A
Welding machines
Industrial application for IGBTs CSG20N65A
PFC circuits
Industrial application for IGBTs CSG20N65A
FAE Expert Insights
"The CSG20N65A is an excellent IGBT for motor drive and power conversion applications. Its low VCE(sat) minimizes conduction losses, while the trench field-stop technology provides fast switching characteristics. I have successfully used this device in variable frequency drives and solar inverter designs. The built-in anti-parallel diode simplifies circuit design and reduces component count. For optimal performance, ensure proper gate drive with 15V and implement adequate thermal management."
Low VCE(sat), fast switching, built-in diode
— 李明, BeiLuo
Frequently Asked Questions
What is the recommended gate drive voltage for CSG20N65A?
CSG20N65A is optimized for +15V turn-on and -8V to -15V turn-off gate drive: (1) +15V VGE(on) ensures low VCE(sat) and minimizes conduction losses. (2) Negative turn-off voltage (-8V to -15V) prevents false turn-on due to dv/dt and Miller effect. (3) Gate resistor selection affects switching speed and EMI - typical values are 10-22Ω for turn-on and 5-15Ω for turn-off. The gate drive should provide 2-4A peak current for fast switching. CR Micro provides recommended gate drive circuits and PCB layout guidelines.
Contact our FAE team for gate driver IC recommendations and gate drive circuit design.
What is the short-circuit withstand time of CSG20N65A?
CSG20N65A has a short-circuit withstand time (tSC) of 10μs minimum at VGE = 15V, VCC = 400V, and starting Tj = 150°C. This specification ensures reliable protection during output short-circuit conditions. The IGBT desaturation detection circuit should detect the fault and turn off the IGBT within 10μs to prevent device damage. CR Micro recommends using gate drivers with integrated desaturation protection for reliable short-circuit protection.
Contact our FAE team for short-circuit protection circuit design and desaturation detection implementation.
What is the thermal resistance of CSG20N65A in TO-247 package?
CSG20N65A in TO-247 package has the following thermal characteristics: (1) Junction-to-case thermal resistance RthJC = 0.6°C/W (IGBT) and 1.2°C/W (diode). (2) Junction-to-ambient thermal resistance RthJA = 40°C/W (without heatsink). (3) Maximum junction temperature Tj(max) = 175°C. For continuous operation at 40A with 1.6V VCE(sat), the conduction loss is 64W, requiring a heatsink with thermal resistance of approximately 1°C/W or better to maintain junction temperature below 125°C at 25°C ambient.
Contact our FAE team for thermal simulation and heatsink selection guidance.
Can CSG20N65A be used for induction cooker applications?
Yes, CSG20N65A is specifically optimized for induction cooker applications. Its characteristics make it ideal for this demanding application: (1) 650V rating provides adequate margin for 220V AC input after rectification (~310V DC). (2) Low VCE(sat) of 1.6V minimizes conduction losses at high currents typical in induction cookers (20-40A). (3) Fast switching with controlled dv/dt reduces EMI and audible noise. (4) 10μs short-circuit withstand provides reliable protection during pan detection failures. (5) Built-in fast recovery diode simplifies resonant tank design.
Contact our FAE team for induction cooker design support and resonant tank optimization.
What is the diode recovery characteristics of the built-in anti-parallel diode?
CSG20N65A's built-in anti-parallel diode features: (1) Fast reverse recovery time trr = 50ns typical at IF = 20A. (2) Soft recovery characteristics to minimize voltage overshoot and EMI. (3) Low forward voltage VF = 1.8V typical at IF = 20A. (4) Reverse recovery charge Qrr = 150nC typical. These characteristics make the diode suitable for high-frequency freewheeling applications in inverter circuits. The soft recovery minimizes dv/dt stress on the complementary IGBT and reduces EMI filtering requirements.
Contact our FAE team for diode recovery characteristics data and snubber circuit design.
How does CSG20N65A compare to international brand IGBTs for motor drive applications?
CSG20N65A offers competitive performance compared to international brand IGBTs: (1) VCE(sat) of 1.6V is comparable to or better than equivalent international products. (2) Switching losses are optimized for 10-20kHz motor drive applications. (3) Short-circuit ruggedness of 10μs meets industry standards. (4) Cost advantage of 25-35% compared to equivalent international brands. (5) Supply chain advantages with shorter lead times for Asia-Pacific customers. CR Micro IGBTs have been successfully deployed in millions of induction cookers and inverter air conditioners, proving field reliability.
Request a detailed comparison report or samples to evaluate CSG20N65A for your motor drive application.