BM300F12B34U2
1200V 300A SiC MOSFET module for medium-power EV charging and DC-DC converters. Features ultra-low switching losses.
Product Overview
Description
1200V 300A SiC MOSFET module with advanced SiC technology. Optimized for medium-power applications.
Ultra-low switching losses enable high-frequency operation. 34mm package with excellent thermal performance.
AEC-Q101 automotive qualified. In stock with FAE support for system design.
Product Series
SiC MOSFET Module
Primary Application
Key Features
- Advanced silicon carbide MOSFET technology
- 1200V voltage rating with 300A current capability
- Ultra-low switching losses - 1/10th of IGBT
- 34mm package with RthJC = 0.15K/W
- No tail current - fast switching
- AEC-Q101 automotive qualification
Specifications
| Technology | SiC MOSFET |
|---|---|
| Voltage | 1200V |
| Current | 300A |
| Package | 34mm |
| VCES | 1200V |
| IC | 300A |
Applications
Medium-power EV charging
Industrial application for SiC MOSFET Modules BM300F12B34U2
Onboard chargers (OBC)
Industrial application for SiC MOSFET Modules BM300F12B34U2
DC-DC converters
Industrial application for SiC MOSFET Modules BM300F12B34U2
High-efficiency power supplies
Industrial application for SiC MOSFET Modules BM300F12B34U2
FAE Expert Insights
"BM300F12B34U2 is perfect for medium-power applications like onboard chargers and DC-DC converters. The 300A rating and 1200V capability make it ideal for next-generation 800V EV platforms. Customers love the compact size and high efficiency."
Compact SiC module ideal for onboard chargers and DC-DC
— Senior FAE - SiC Applications, BeiLuo
Frequently Asked Questions
What is the RDS(on) of BM300F12B34U2?
BM300F12B34U2 typical RDS(on) is 4.5mΩ at 25°C with +18V gate voltage. At 175°C junction temperature, RDS(on) increases to approximately 8.0mΩ. The low RDS(on) minimizes conduction losses, enabling high system efficiency.
Calculate conduction losses at maximum operating temperature.
What is the switching frequency range?
BM300F12B34U2 can operate at 50-150kHz switching frequency. The ultra-low switching losses enable high-frequency operation, reducing passive component size. Can operate up to 200kHz for specialized applications with proper thermal management.
Select 50-100kHz for optimal efficiency. Use higher frequencies for size-constrained designs.
What gate drive is required?
BM300F12B34U2 requires: +18V turn-on for low RDS(on), -4V turn-off for dv/dt immunity. Gate resistor: 3-10Ω. Peak gate current: 3A+. Gate drive power: ~2W at 100kHz. Use isolated SiC gate drivers with adequate drive capability.
Use isolated SiC gate drivers with +18V/-4V output and 3A+ peak current.
How does BM300F12B34U2 compare to higher current SiC modules?
BM300F12B34U2 (300A) vs BM600F12B34U2 (400A): BM300 has lower current and cost, ideal for 100-150kW applications. BM600 for 150-250kW. Both use same 1200V technology and 34mm package. Select based on current requirements and cost budget.
Select BM300 for 100-150kW applications. Select BM600 for higher power requirements.
What is the thermal resistance?
Thermal resistance junction-to-case RthJC = 0.15K/W typical. Maximum junction temperature Tj(max) = 175°C. The module can handle significant power dissipation with proper heatsinking. Calculate heatsink requirements based on power dissipation.
Calculate heatsink requirements based on power dissipation and maximum junction temperature.
Is BM300F12B34U2 suitable for onboard chargers?
Yes, BM300F12B34U2 is excellent for onboard chargers (OBC). The 1200V rating supports 800V EV platforms, and 300A provides ample current for 11-22kW OBC designs. High-frequency operation enables compact magnetics and high power density.
Use for 800V onboard chargers and DC-DC converters.